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dc.contributor.authorTseng, Chih-Hanen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2019-04-02T06:01:00Z-
dc.date.available2019-04-02T06:01:00Z-
dc.date.issued2019-01-01en_US
dc.identifier.issn1528-7483en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.cgd.8b00916en_US
dc.identifier.urihttp://hdl.handle.net/11536/148685-
dc.description.abstractWe reported that highly (111)-oriented nanotwinned Cu (nt-Cu) can be grown by DC electroplating using a CuSO4 based electrolyte in our previous study. However, in practical applications, the addition of H2SO4 is required to improve uniformity of the Cu films. In this study, we added H2SO4 in the CuSO4 based electrolyte with different concentrations, ranging from SO to 110 g/L. It is found that nt-Cu can be fabricated with the addition of the H2SO4 acid at the current densities from 5 A/dm(2) to 11 A/dm(2). The ratios of (111) to (200) or (111) to (220) X-ray reflections are extremely high, indicating that the (111) preferred orientation is very strong. The texture fraction and texture coefficient could not precisely determine which Cu films contain columnar (111) nt-Cu grains. We propose a criteria to predict the columnar (111) nt-Cu microstructure by the ratios of (111) to (200) and (111) to (220) X-ray reflections. When both ratios exceed 1000, the fabricated Cu films could possess columnar (111) nt-Cu grains.en_US
dc.language.isoen_USen_US
dc.titleGrowth of Highly (111)-Oriented Nanotwinned Cu with the Addition of Sulfuric Acid in CuSO4 Based Electrolyteen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.cgd.8b00916en_US
dc.identifier.journalCRYSTAL GROWTH & DESIGNen_US
dc.citation.volume19en_US
dc.citation.spage81en_US
dc.citation.epage89en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000455076500012en_US
dc.citation.woscount0en_US
Appears in Collections:Articles