標題: Effective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS2 transistors
作者: Chen, Po-Chun
Lin, Chih-Pin
Hong, Chuan-Jie
Yang, Chih-Hao
Lin, Yun-Yan
Li, Ming-Yang
Li, Lain-Jong
Yu, Tung-Yuan
Su, Chun-Jung
Li, Kai-Shin
Zhong, Yuan-Liang
Hou, Tuo-Hung
Lan, Yann-Wen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: monolayer MoS2 devices;standard wet cleaning;field-effect transistors;N-methyl-2-pyrrolidone
公開日期: 1-Feb-2019
摘要: Two-dimensional semiconductors, such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication, which could adversely affect device performance. To ensure high device yield, uniformity and performance, the semiconductor industry has long employed wet chemical cleaning strategies to remove undesirable surface contaminations, adsorbates, and native oxides from the surface of Si wafers. A similarly effective surface cleaning technique for two-dimensional materials has not yet been fully developed. In this study, we propose a wet chemical cleaning strategy for MoS2 by using N-methyl-2-pyrrolidone. The cleaning process not only preserves the intrinsic properties of monolayer MoS2, but also significantly improves the performance of monolayer MoS2 field-effect-transistors. Superior device on current of 12 Am-1 for a channel length of 400 nm, contact resistance of 15 k<bold>m</bold>, field-effect mobility of 15.5 cm(2)V(-1)s(-1), and the average on-off current ratio of 10(8) were successfully demonstrated
URI: http://dx.doi.org/10.1007/s12274-018-2215-5
http://hdl.handle.net/11536/148709
ISSN: 1998-0124
DOI: 10.1007/s12274-018-2215-5
期刊: NANO RESEARCH
Volume: 12
起始頁: 303
結束頁: 308
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