標題: On the Carrier Transport for InGaN/GaN Core-Shell Nanorod Green Light-Emitting Diodes
作者: Kou, Jianquan
Chen, Sung-Wen Huang
Che, Jiamang
Shao, Hua
Chu, Chunshuang
Tian, Kangkai
Zhang, Yonghui
Bi, Wengang
Zhang, Zi-Hui
Kuo, Hao-Chung
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
關鍵字: GaN;nanorod light-emitting diodes (NR LEDs);charge transport;vertical charge injection;external quantum efficiency (EQE)
公開日期: 1-Jan-2019
摘要: In this paper, we model and investigate the carrier transport for the core-shell nanorod (NR) structured green light-emitting diodes (LEDs) for which the InGaN/GaN multiple quantum wells are grown on the nonpolar surface of the NR. Our results show the absence of polarization fields in the m-plane quantum wells for the core-shell NR LEDs, which manifest the flat energy band condition, the improved electron injection efficiency, and the high electron-hole wave functions overlap for the quantum wells, leading to the high radiative recombination rate and the enhanced quantum efficiency. We further find that the quantum efficiency is also affected by the vertical charge injection for the core-shell NR LEDs. The vertical charge injection is more sensitive to the doping concentration and the thickness of the p-GaN layer than of the n-GaN layer. Moreover, the increase of the NR height also leads to the nonuniform vertical charge injection.
URI: http://dx.doi.org/10.1109/TNANO.2018.2879817
http://hdl.handle.net/11536/148717
ISSN: 1536-125X
DOI: 10.1109/TNANO.2018.2879817
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 18
起始頁: 176
結束頁: 182
Appears in Collections:Articles