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dc.contributor.authorYang, Shih-Hsienen_US
dc.contributor.authorYao, You-Tengen_US
dc.contributor.authorXu, Yongen_US
dc.contributor.authorLin, Che-Yien_US
dc.contributor.authorChang, Yuan-Mingen_US
dc.contributor.authorSuen, Yuen-Wuuen_US
dc.contributor.authorSun, Huabinen_US
dc.contributor.authorLien, Chen-Hsinen_US
dc.contributor.authorLi, Wenwuen_US
dc.contributor.authorLin, Yen-Fuen_US
dc.date.accessioned2019-04-02T06:00:44Z-
dc.date.available2019-04-02T06:00:44Z-
dc.date.issued2019-03-08en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1361-6528/aaf765en_US
dc.identifier.urihttp://hdl.handle.net/11536/148725-
dc.description.abstractPower dissipation is a crucial problem as the packing density of transistors increases in modern integrated circuits. Tunnel field-effect transistors (TFETs), which have high energy filtering provided by band-to-band tunneling (BTBT), have been proposed as an alternative electronics architecture to decrease the energy loss in bias operation and to achieve steep switching at room temperature. Very recently, the BTBT behavior has been demonstrated in van der Waals heterostructures by using unintentionally doped semiconductors. The reason of the BTBT formation is attributed to a significant band bending near the heterointerface, resulting in carrier accumulations. In this work, to investigate charge transport in type-III transistors, we adopted the same band-bending concept to fabricate van der Waals BP/MoS2 heterostructures. Through analyzing the temperature dependence of their electrical properties, we carefully ruled out the contribution of metal-semiconductor contact resistances and improved our understanding of carrier injection in 2D type-III transistors. The BP/MoS2 heterostructures showed both negative differential resistance and 1/f(2) current fluctuations, strongly demonstrating the BTBT operation. Finally, we also designed a TFET based on this heterostructure with an ionic liquid gate, and this TFET demonstrated an subthreshold slope can successfully surmount the thermal limit of 60 mV/decade. This work improves our understanding of charge transport in such layered heterostructures and helps to improve the energy efficiency of next-generation nanoscale electronics.en_US
dc.language.isoen_USen_US
dc.subjectvan der Waals heterostructuresen_US
dc.subjectBP/MoS2en_US
dc.subjecttunnel field-effect transistorsen_US
dc.subjectnegative differential resistanceen_US
dc.subjectBTBTen_US
dc.titleAtomically thin van der Waals tunnel field-effect transistors and its potential for applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1361-6528/aaf765en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume30en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000455934300001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles