標題: Switching Behavior and Forward Bias Degradation of 700V, 0.2A, beta-Ga2O3 Vertical Geometry Rectifiers
作者: Yang, Jiancheng
Fares, Chaker
Ren, Fan
Chen, Yen-Ting
Liao, Yu-Te
Chang, Chin-Wei
Lin, Jenshan
Tadjer, Marko
Smith, David J.
Pearton, S. J.
Kuramata, Akito
電機工程學系
Department of Electrical and Computer Engineering
公開日期: 30-Jan-2019
摘要: We report the switching recovery characteristics of large area (contact dimension 0.04 x 0.04 cm(2)) vertical geometry beta-Ga2O3 Schottky rectifiers, consisting of Si-doped epitaxial layers on conducting bulk substrates. Devices that were switched from forward current of 0.225 A to reverse off-state voltage of -700 V in an inductive load test circuit showed a recovery time (t(rr)) of 82 ns, with a reverse recovery current (I-rr) of 38 mA and dI/dt of -2.28 A. mu sec(-1). This shows the potential of Ga2O3 rectifiers for power switching applications, provided effective thermal management schemes can be implemented. Devices deliberately tested to failure under forward bias conditions exhibit delamination and cracking of the Ni/Au contact and underlying epitaxial Ga2O3 due to the low thermal conductivity of the Ga2O3. This failure mode is different to that under high reverse breakdown conditions, where pits formed by material failure under the high field generated at the edge of the rectifying contact occurs. (C) The Author(s) 2019. Published by ECS.
URI: http://dx.doi.org/10.1149/2.0061907jss
http://hdl.handle.net/11536/148792
ISSN: 2162-8769
DOI: 10.1149/2.0061907jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 8
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