Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, Chia-Chi | en_US |
dc.contributor.author | Wu, Hsin-Jay | en_US |
dc.contributor.author | Agne, Matthias T. | en_US |
dc.contributor.author | Witting, Ian T. | en_US |
dc.contributor.author | Deng, Ping-Yuan | en_US |
dc.contributor.author | Snyder, G. Jeffrey | en_US |
dc.contributor.author | Chu, Jinn P. | en_US |
dc.date.accessioned | 2019-04-02T06:00:34Z | - |
dc.date.available | 2019-04-02T06:00:34Z | - |
dc.date.issued | 2019-01-01 | en_US |
dc.identifier.issn | 2166-532X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.5046826 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/148804 | - |
dc.description.abstract | The thin film metallic glass (TFMG) is an effective diffusion barrier layer for PbTe-based thermoelectric (TE) modules. Reaction couples structured with Cu/TFMG/PbTe are prepared via sputter-deposition and are annealed at 673 K for 8-96 h. The transmission line method is adopted for the assessment of electrical contact resistivity upon the PbTe/TFMG, and the value remains in the range of 3.3-2.5 x 10(-9) (Omega m(2)). The titanium-based TFMG remains amorphous upon annealing at 673 K for 48 h and effectively blocks the inter-diffusion by not having grain-boundaries, which only allows the bulk diffusion between the metal electrode and the TE substrate. (C) 2019 Author(s). | en_US |
dc.language.iso | en_US | en_US |
dc.title | Titanium-based thin film metallic glass as diffusion barrier layer for PbTe-based thermoelectric modules | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.5046826 | en_US |
dc.identifier.journal | APL MATERIALS | en_US |
dc.citation.volume | 7 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000457407500011 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |