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dc.contributor.authorYu, Chia-Chien_US
dc.contributor.authorWu, Hsin-Jayen_US
dc.contributor.authorAgne, Matthias T.en_US
dc.contributor.authorWitting, Ian T.en_US
dc.contributor.authorDeng, Ping-Yuanen_US
dc.contributor.authorSnyder, G. Jeffreyen_US
dc.contributor.authorChu, Jinn P.en_US
dc.date.accessioned2019-04-02T06:00:34Z-
dc.date.available2019-04-02T06:00:34Z-
dc.date.issued2019-01-01en_US
dc.identifier.issn2166-532Xen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.5046826en_US
dc.identifier.urihttp://hdl.handle.net/11536/148804-
dc.description.abstractThe thin film metallic glass (TFMG) is an effective diffusion barrier layer for PbTe-based thermoelectric (TE) modules. Reaction couples structured with Cu/TFMG/PbTe are prepared via sputter-deposition and are annealed at 673 K for 8-96 h. The transmission line method is adopted for the assessment of electrical contact resistivity upon the PbTe/TFMG, and the value remains in the range of 3.3-2.5 x 10(-9) (Omega m(2)). The titanium-based TFMG remains amorphous upon annealing at 673 K for 48 h and effectively blocks the inter-diffusion by not having grain-boundaries, which only allows the bulk diffusion between the metal electrode and the TE substrate. (C) 2019 Author(s).en_US
dc.language.isoen_USen_US
dc.titleTitanium-based thin film metallic glass as diffusion barrier layer for PbTe-based thermoelectric modulesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.5046826en_US
dc.identifier.journalAPL MATERIALSen_US
dc.citation.volume7en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000457407500011en_US
dc.citation.woscount0en_US
Appears in Collections:Articles