標題: | Reconfigurable Boolean Logic in Memristive Crossbar: The Principle and Implementation |
作者: | Hu, Si-Yu Li, Yi Cheng, Long Wang, Zhuo-Rui Chang, Ting-Chang Sze, Simon M. Miao, Xiang-Shui 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Memristor;crossbar array;Boolean logic;reconfigurable;in-memory computing |
公開日期: | 1-二月-2019 |
摘要: | In-memory computing based on memristive logic is considered as a prospective non von Neumann computing paradigm. In this letter, we systematically analyze the four-variable logic method and map it into the operation of two anti-serial complementary memristors in the crossbar array architecture. Arbitrary Boolean logic can be implemented within three cycles with the experimental evidence of reconfigurable NAND, NOR, and XOR logic using Pt/HfO2/TiN devices. Taking advantage of the functional flexibility, a parallel 1-bit full adder that can be realized in 8 cycles within a 4 x 3 array has been designed and verified in simulation. |
URI: | http://dx.doi.org/10.1109/LED.2018.2886364 http://hdl.handle.net/11536/148816 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2018.2886364 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 40 |
起始頁: | 200 |
結束頁: | 203 |
顯示於類別: | 期刊論文 |