標題: Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory
作者: Wang, Zhuo-Rui
Su, Yu-Ting
Li, Yi
Zhou, Ya-Xiong
Chu, Tian-Jian
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Sze, Simon M.
Miao, Xiang-Shui
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: 1T1R RRAM;Boolean logics;nonvolatile;logic in memory
公開日期: 二月-2017
摘要: Nonvolatile stateful logic through RRAM is a promising route to build in-memory computing architecture. In this letter, a logic methodology based on 1T1R structure has been proposed to implement functionally complete Boolean logics. Arbitrary logic functions could be realized in two steps: initialization and writing. An additional read step is required to read out the logic result, which is in situ stored in the nonvolatile resistive state of the memory. Cascade problem in building larger logic circuits is also discussed. Our 1T1R logic device and operation method could be beneficial for massive integration and practical application of RRAM-based logic.
URI: http://dx.doi.org/10.1109/LED.2016.2645946
http://hdl.handle.net/11536/133171
ISSN: 0741-3106
DOI: 10.1109/LED.2016.2645946
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 38
Issue: 2
起始頁: 179
結束頁: 182
顯示於類別:期刊論文