標題: | Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory |
作者: | Wang, Zhuo-Rui Su, Yu-Ting Li, Yi Zhou, Ya-Xiong Chu, Tian-Jian Chang, Kuan-Chang Chang, Ting-Chang Tsai, Tsung-Ming Sze, Simon M. Miao, Xiang-Shui 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | 1T1R RRAM;Boolean logics;nonvolatile;logic in memory |
公開日期: | 二月-2017 |
摘要: | Nonvolatile stateful logic through RRAM is a promising route to build in-memory computing architecture. In this letter, a logic methodology based on 1T1R structure has been proposed to implement functionally complete Boolean logics. Arbitrary logic functions could be realized in two steps: initialization and writing. An additional read step is required to read out the logic result, which is in situ stored in the nonvolatile resistive state of the memory. Cascade problem in building larger logic circuits is also discussed. Our 1T1R logic device and operation method could be beneficial for massive integration and practical application of RRAM-based logic. |
URI: | http://dx.doi.org/10.1109/LED.2016.2645946 http://hdl.handle.net/11536/133171 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2016.2645946 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 38 |
Issue: | 2 |
起始頁: | 179 |
結束頁: | 182 |
顯示於類別: | 期刊論文 |