標題: A Single-Inductor Dual-Output Converter With the Stacked MOSFET Driving Technique for Low Quiescent Current and Cross Regulation
作者: Chen, Hsin
Huang, Chao-Jen
Kuo, Chun-Chieh
Lin, Li-Chi
Ma, Yu-Sheng
Yang, Wen-Hau
Chen, Ke-Horng
Lin, Ying-Hsi
Lin, Shian-Ru
Tsai, Tsung-Yen
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: Cross regulation (CR);low-dropout (LDO) regulator;single-inductor dual-output (SIDO) converter;stacked MOSFET driver (SMD) technology;stacked MOSFET structures
公開日期: 1-三月-2019
摘要: Stacked MOSFET structures made of low-voltage devices suffer from degraded transient response or large footprint when a capacitorless or dominant-pole compensated low-dropout (LDO) regulator biases the driver. Due to the self-stabilizing nature, the proposed stacked MOSFET driver (SMD) technology effectively drives the power stage and greatly reduces the noise at the switching nodes for low cross regulation (CR) in a single-inductor dual-output (SIDO) converter. In addition, two inherent LDO regulators in SMD technology fully regulate the dual outputs with the advantage of low quiescent current at no-load conditions. The experimental results show that the test chip fabricated under the 0.25-mu m process has low CR of 0.015 mV/mA and ultralow quiescent current of 5 mu A under no-load conditions.
URI: http://dx.doi.org/10.1109/TPEL.2018.2845124
http://hdl.handle.net/11536/148845
ISSN: 0885-8993
DOI: 10.1109/TPEL.2018.2845124
期刊: IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume: 34
起始頁: 2758
結束頁: 2770
顯示於類別:期刊論文