完整後設資料紀錄
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dc.contributor.authorWang, YLen_US
dc.contributor.authorLiu, Cen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorTseng, WTen_US
dc.date.accessioned2019-04-02T05:59:22Z-
dc.date.available2019-04-02T05:59:22Z-
dc.date.issued1998-01-01en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0254-0584(97)01996-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/148868-
dc.description.abstractA novel in-situ endpoint detection method used pad temperature measurement to control the polishing tungsten and barrier metal Ti/TiN is proposed. The metal chemical-mechanical polishing (CMP) process includes chemical reaction. It is an exothermic process as the polishing slurry reacts on tungsten and Ti/TiN films. Therefore, the pad temperature increases as tungsten and barrier metal films are polished, but will drop dramatically when metal layers are polished and touch the oxide layer. A non-contact thermal sensor system was installed on our CMP tool to measure the pad temperature. From the in-situ pad temperature curve, the endpoint can be detected clearly and the polishing process stops at the oxide layer. This method can also be used to study the reactions between the pad temperature curve and the effects of CMP process conditions such as down force, platen speed as well as polishing performance such as removal rate and uniformity. (C) 1998 Elsevier Science S.A.en_US
dc.language.isoen_USen_US
dc.subjectchemical-mechanical polishingen_US
dc.subjectendpoint detectionen_US
dc.subjecttungsten plugen_US
dc.subjecttungsten CMPen_US
dc.subjectpad temperatureen_US
dc.titleThe exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detectionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0254-0584(97)01996-2en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume52en_US
dc.citation.spage17en_US
dc.citation.epage22en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000071383500002en_US
dc.citation.woscount22en_US
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