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dc.contributor.authorWang, TCen_US
dc.contributor.authorLee, JYen_US
dc.contributor.authorHsieh, CCen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2019-04-02T06:00:17Z-
dc.date.available2019-04-02T06:00:17Z-
dc.date.issued2005-02-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.44.1067en_US
dc.identifier.urihttp://hdl.handle.net/11536/148880-
dc.description.abstractA series of reflection-high-energy-electron-diffraction-monitored annealings with different heating rates have been conducted on Strontium Titanate films deposited by laser ablation at room temperature. All the films exhibited a steep RHEED intensity rise above 660 degrees C during annealing with increasing temperature. The peak temperatures of the intensity derivatives were found to shift at different heating rates, suggesting an activated surface state transition. A Kissinger type plot of the peak temperatures showed an effective activation energy of 4 eV.en_US
dc.language.isoen_USen_US
dc.subjectRHEEDen_US
dc.subjectactivation energyen_US
dc.subjectreflection high-energy electron diffractionen_US
dc.subjectKissinger ploten_US
dc.subjectkineticsen_US
dc.titleActivated kinetics of room-temperature-deposited SrTiO3 thin films investigated by reflection-high-energy-electron-diffraction-monitored annealing at different heating ratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.44.1067en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume44en_US
dc.citation.spage1067en_US
dc.citation.epage1068en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000227675300058en_US
dc.citation.woscount1en_US
Appears in Collections:Articles