標題: Activated kinetics of room-temperature-deposited SrTiO(3) thin films investigated by reflection-high-energy-electron-diffraction-monitored annealing at different heating rates
作者: Wang, TC
Lee, JY
Hsieh, CC
Juang, JY
Wu, KH
Uen, TM
Gou, YS
電子物理學系
Department of Electrophysics
公開日期: 1-二月-2005
摘要: A series of reflection-high-energy-electron-diffraction-monitored annealings with different heating rates have been conducted on Strontium Titanate films deposited by laser ablation at room temperature. All the films exhibited a steep RHEED intensity rise above 660 degrees C during annealing with increasing temperature. The peak temperatures of the intensity derivatives were found to shift at different heating rates, suggesting an activated surface state transition. A Kissinger type plot of the peak temperatures showed an effective activation energy of 4 eV.
URI: http://dx.doi.org/10.1143/JJAP.44.1067
http://hdl.handle.net/11536/23478
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.1067
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 2
起始頁: 1067
結束頁: 1068
顯示於類別:期刊論文