標題: | Activated kinetics of room-temperature-deposited SrTiO3 thin films investigated by reflection-high-energy-electron-diffraction-monitored annealing at different heating rates |
作者: | Wang, TC Lee, JY Hsieh, CC Juang, JY Wu, KH Uen, TM Gou, YS 電子物理學系 Department of Electrophysics |
關鍵字: | RHEED;activation energy;reflection high-energy electron diffraction;Kissinger plot;kinetics |
公開日期: | 1-Feb-2005 |
摘要: | A series of reflection-high-energy-electron-diffraction-monitored annealings with different heating rates have been conducted on Strontium Titanate films deposited by laser ablation at room temperature. All the films exhibited a steep RHEED intensity rise above 660 degrees C during annealing with increasing temperature. The peak temperatures of the intensity derivatives were found to shift at different heating rates, suggesting an activated surface state transition. A Kissinger type plot of the peak temperatures showed an effective activation energy of 4 eV. |
URI: | http://dx.doi.org/10.1143/JJAP.44.1067 http://hdl.handle.net/11536/148880 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.44.1067 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 44 |
起始頁: | 1067 |
結束頁: | 1068 |
Appears in Collections: | Articles |