標題: Boron-doping effect on the super-high density Si quantum dot thin films utilizing a gradient Si-rich oxide multilayer structure
作者: Huang, Pin-Ruei
Chen, You-Cheng
Kuo, Kuang-Yang
Lee, Po-Tsung
光電工程學系
Department of Photonics
關鍵字: Boron-doping effect;Si quantum dot;Gradient Si-rich oxide;Multilayer;Solar cell
公開日期: 1-May-2019
摘要: Boron (B)-doped gradient Si-rich oxide multilayer (GSRO-ML) structure is utilized to realize super-high density Si quantum dots (QDs) thin films with large carrier tunneling probability by co-sputtering. The B-doping effect on crystalline, optical, electrical and photovoltaic (PV) properties of Si QD thin films is investigated in this study. With increased B-doping concentration, the preserved high crystallinity of Si QDs and the reduced optical bandgap are observed. An optimized doping condition is found for the electrical and PV properties. Further increasing the doping concentration leads to increased inactive B atoms and interfacial over-diffusion. The issue of interfacial over-diffusion can be efficiently improved by inserting lowly B-doped GSRO-ML thin films. Our results show the feasibility and great potential for high efficiency Si-based solar cells integrating Si QDs by properly doped B atoms in GSRO-ML thin film structure.
URI: http://dx.doi.org/10.1016/j.solmat.2019.01.030
http://hdl.handle.net/11536/148900
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2019.01.030
期刊: SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume: 193
起始頁: 287
結束頁: 291
Appears in Collections:Articles