標題: Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors
作者: Liu, Xinke
Chen, Yuxuan
Li, Dabing
Wang, Sheng-Wen
Ting, Chao-Cheng
Chen, Lin
Ang, Kah-Wee
Qiu, Cheng-Wei
Chueh, Yu-Lun
Sun, Xiaojuan
Kuo, Hao-Chung
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
公開日期: 1-Mar-2019
摘要: Molybdenum disulfide (MoS2)-based phototransistors are attractive for optical electronics in a large-scale size, such as transparent touch screens. However, most of the work done over the past decade has been on an opaque SiO2/Si wafer with a small size (micrometer to millimeter). In this work, a large-scale multilayer MoS2-based phototransistor has been fabricated on a transparent freestanding gallium nitride (GaN) wafer using a scalable chemical vapor deposition method. Due to the near lattice match and small thermal expansion mismatch between GaN and MoS2, the as-grown multilayer MoS2-on-GaN film shows high material quality in terms of low full width at half-maximum (similar to 5.16 cm(-1)) for the E-2g(1) Raman mode and a high absorption coefficient (similar to 10(6) cm(-1)) in the wavelength range of 405-638 nm. Under a wavelength of 405 nm at an incident power of 2 mWand applied voltage of 9 V, the fabricated MoS2-on-GaN phototransistor achieved a maximum responsivity of 17.2 A/W, a photocurrent gain of 53.6, and an external quantum efficiency of 5289%, with specific detectivity (similar to 10(10)-10(12) Jones) and low noise equivalent power (10(-12)-10(-14) W/Hz(1/2)) in the visible range of 405-638 nm. A typical response time of 0.1-4 s in the ambient air has also been recorded for the demonstrated MoS2-on-GaN phototransistor. Our work paves a technologic stepping stone for MoS2-based phototransistors for multifunctional transparent and touch-based optoelectronics in the future. (C) 2019 Chinese Laser Press
URI: http://dx.doi.org/10.1364/PRJ.7.000311
http://hdl.handle.net/11536/148943
ISSN: 2327-9125
DOI: 10.1364/PRJ.7.000311
期刊: PHOTONICS RESEARCH
Volume: 7
起始頁: 311
結束頁: 317
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