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| Reliability of strained SiGe channel p-channel metal-oxide-semiconductor field-effect transistors with ultra-thin (EOT=3.1nm) N2O-annealed SiN gate dielectric | 1 |
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| Reliability of strained SiGe channel p-channel metal-oxide-semiconductor field-effect transistors with ultra-thin (EOT=3.1nm) N2O-annealed SiN gate dielectric | 1 |
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