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dc.contributor.authorTsai, Yi-Chiaen_US
dc.contributor.authorMagyari-Kope, Blankaen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorSamukawa, Seijien_US
dc.contributor.authorNishi, Yoshioen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2019-04-02T05:58:39Z-
dc.date.available2019-04-02T05:58:39Z-
dc.date.issued2019-01-01en_US
dc.identifier.issn2168-6734en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JEDS.2019.2897167en_US
dc.identifier.urihttp://hdl.handle.net/11536/148992-
dc.description.abstractHigh contact resistance keeps black phosphorus (BP) from fully wielding its excellent material property. Using first-principles calculations, we analyze the interfacial binding behavior and the impact of binding on the other layers of a trilayer BP. We found that the interfacial charge density and charge transfer of Scandium (Sc)-contacted trilayer BP are 2.67 and 3.29 times greater than Au-contacted trilayer BP, respectively. Moreover, the interfacial tunneling barrier height and width of Sc-contacted trilayer BP are 0 eV and 1.851 angstrom, which are significantly smaller than that of 5.1 eV and 2.447 angstrom observed in Au-contacted trilayer BP. All these facts suggest a strong bonding and efficient carrier transmission between Sc contact and trilayer BP substrate. Therefore, we conclude that the Sc electrode can lead to a superior performance that is consistent with the experiment.en_US
dc.language.isoen_USen_US
dc.subjectBlack phosphorusen_US
dc.subjectcontacten_US
dc.subjectscandiumen_US
dc.subjectgolden_US
dc.subjectmultilayeren_US
dc.subjectfirst-principles calculationen_US
dc.subjectDFTen_US
dc.subjectelectron injectionen_US
dc.titleContact Engineering of Trilayer Black Phosphorus With Scandium and Golden_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JEDS.2019.2897167en_US
dc.identifier.journalIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETYen_US
dc.citation.volume7en_US
dc.citation.spage322en_US
dc.citation.epage328en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000460753000046en_US
dc.citation.woscount0en_US
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