完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai, Yi-Chia | en_US |
dc.contributor.author | Magyari-Kope, Blanka | en_US |
dc.contributor.author | Li, Yiming | en_US |
dc.contributor.author | Samukawa, Seiji | en_US |
dc.contributor.author | Nishi, Yoshio | en_US |
dc.contributor.author | Sze, Simon M. | en_US |
dc.date.accessioned | 2019-04-02T05:58:39Z | - |
dc.date.available | 2019-04-02T05:58:39Z | - |
dc.date.issued | 2019-01-01 | en_US |
dc.identifier.issn | 2168-6734 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/JEDS.2019.2897167 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/148992 | - |
dc.description.abstract | High contact resistance keeps black phosphorus (BP) from fully wielding its excellent material property. Using first-principles calculations, we analyze the interfacial binding behavior and the impact of binding on the other layers of a trilayer BP. We found that the interfacial charge density and charge transfer of Scandium (Sc)-contacted trilayer BP are 2.67 and 3.29 times greater than Au-contacted trilayer BP, respectively. Moreover, the interfacial tunneling barrier height and width of Sc-contacted trilayer BP are 0 eV and 1.851 angstrom, which are significantly smaller than that of 5.1 eV and 2.447 angstrom observed in Au-contacted trilayer BP. All these facts suggest a strong bonding and efficient carrier transmission between Sc contact and trilayer BP substrate. Therefore, we conclude that the Sc electrode can lead to a superior performance that is consistent with the experiment. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Black phosphorus | en_US |
dc.subject | contact | en_US |
dc.subject | scandium | en_US |
dc.subject | gold | en_US |
dc.subject | multilayer | en_US |
dc.subject | first-principles calculation | en_US |
dc.subject | DFT | en_US |
dc.subject | electron injection | en_US |
dc.title | Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/JEDS.2019.2897167 | en_US |
dc.identifier.journal | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | en_US |
dc.citation.volume | 7 | en_US |
dc.citation.spage | 322 | en_US |
dc.citation.epage | 328 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000460753000046 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |