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| Stabilizing Resistive Switching Characteristics by Inserting Indium-Tin-Oxide Layer as Oxygen Ion Reservoir in HfO2-Based Resistive Random Access Memory | 1 |
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| Stabilizing Resistive Switching Characteristics by Inserting Indium-Tin-Oxide Layer as Oxygen Ion Reservoir in HfO2-Based Resistive Random Access Memory | 1 |
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