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dc.contributor.authorChen, Po-Hsunen_US
dc.contributor.authorSu, Yu-Tingen_US
dc.contributor.authorChang, Fu-Chenen_US
dc.date.accessioned2019-04-02T05:58:59Z-
dc.date.available2019-04-02T05:58:59Z-
dc.date.issued2019-03-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2019.2895079en_US
dc.identifier.urihttp://hdl.handle.net/11536/149009-
dc.description.abstractThis paper investigates the issues of oxygen accumulation and variation in the high-resistance state of HfO2-based resistive random access memory (RRAM), with improvement attained by inserting a thin oxygen-vacancy-rich layer of indium-tin-oxide (ITO) film. By acting as the oxygen ion reservoir, this ITO thin film on the TiN electrode can further stabilize resistance switching (RS) characteristics. In terms of reliability, ac endurance, and retention tests confirm stable RS characteristics for the Pt/HfO2/ITO/TiN device. Finally, a conducting model was proposed to explain the influence of the ITO thin layer and clarify the physical mechanism of electrical improvements.en_US
dc.language.isoen_USen_US
dc.subjectHfO2 insulatoren_US
dc.subjectindium-tin-oxide (ITO)en_US
dc.subjectoxygen ion reservoiren_US
dc.subjectresistive random access memory (RRAM)en_US
dc.titleStabilizing Resistive Switching Characteristics by Inserting Indium-Tin-Oxide Layer as Oxygen Ion Reservoir in HfO2-Based Resistive Random Access Memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2019.2895079en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume66en_US
dc.citation.spage1276en_US
dc.citation.epage1280en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000460970400021en_US
dc.citation.woscount0en_US
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