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dc.contributor.authorKao, Yu-Chengen_US
dc.contributor.authorChou, Hao-Mingen_US
dc.contributor.authorHsu, Shun-Chiehen_US
dc.contributor.authorLin, Alberten_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorShill, Zun-Haoen_US
dc.contributor.authorChang, Chun-Lingen_US
dc.contributor.authorHong, Hwen-Fenen_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.date.accessioned2019-04-02T05:58:57Z-
dc.date.available2019-04-02T05:58:57Z-
dc.date.issued2019-03-13en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-019-40727-yen_US
dc.identifier.urihttp://hdl.handle.net/11536/149015-
dc.description.abstractThe integration of III-V and Si multi-junction solar cells as photovoltaic devices has been studied in order to achieve high photovoltaic conversion efficiency. However, large differences in the coefficients of thermal expansion and the lattice parameters of GaAs, Si, and InGaAs have made it difficult to obtain high-efficiency solar cells grown as epilayers on Si and InP substrates. In this paper, two types of devices, including GaInP/GaAs stacked on Si (GalnP/GaAs//Si) and GaInP/GaAs stacked on InGaAs (GaInP/GaAs//InGaAs), are fabricated via mechanical stacking and wire bonding technologies. Mechanically stacked GaInP/GaAs//Si and GaInP/GaAsllInGaAs triple-junction solar cells are prepared via glue bonding. Current-voltage measurements of the two samples are made at room temperature. The short-circuit current densities of the GaInP/GaAs//Si and GaInP/GaAs//InGaAs solar cells are 13.37 and 13.66 mA/cm(2), while the open-circuit voltages of these two samples are measured to be 2.71 and 2.52V, respectively. After bonding the GaInP/GaAs dual-junction with the Si and InGaAs solar cells, the conversion efficiency is relatively improved by 32.6% and 30.9%, respectively, compared to the efficiency of the GaInP/GaAs dual-junction solar cell alone. This study demonstrates the high potential of combining mechanical stacked with wire bonding and ITO films to achieve high conversion efficiency in solar cells with three or more junctions.en_US
dc.language.isoen_USen_US
dc.titlePerformance comparison of III-V//Si and III-V//InGaAs multi-junction solar cells fabricated by the combination of mechanical stacking and wire bondingen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-019-40727-yen_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume9en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000461017700008en_US
dc.citation.woscount0en_US
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