完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | JEN, TS | en_US |
dc.contributor.author | PAN, JW | en_US |
dc.contributor.author | SHIN, NF | en_US |
dc.contributor.author | HONG, JW | en_US |
dc.contributor.author | CHANG, CY | en_US |
dc.date.accessioned | 2019-04-02T05:59:15Z | - |
dc.date.available | 2019-04-02T05:59:15Z | - |
dc.date.issued | 1994-10-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/16.324586 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/149119 | - |
dc.description.abstract | In order to improve the electroluminescence (EL) characteristics of the hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), a barrier layer (BL) was inserted at its p-i interface to enhance the hole injection efficiency under forward-bias operation. The a-SiC:H TFLED's with various optical gaps of BL had been fabricated and characterized. In addition, a composition-graded n+-layer was used to reduce its series and contact resistances to the Al electrode and hence the EL threshold voltage (V(th)) of an a-SiC:H BL TFLED. The highest obtainable brightness of an a-SiC:H BL TFLED was 342 cd/m2 at an injection current density of 600 mA/cm2 and the lowest EL V(th) achievable was 6.0 V. The current-conduction mechanism of an a-SiC:H BL TFLED had also been investigated. Within the lower applied-bias region, it showed an ohmic current, while within the higher applied-bias region, a space-charge-limited current (SCLC) was observed. | en_US |
dc.language.iso | en_US | en_US |
dc.title | ELECTROLUMINESCENCE CHARACTERISTICS AND CURRENT-CONDUCTION MECHANISM OF A SI-C-H-P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYER INSERTED AT P-I INTERFACE | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/16.324586 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 41 | en_US |
dc.citation.spage | 1761 | en_US |
dc.citation.epage | 1769 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1994PK41000011 | en_US |
dc.citation.woscount | 6 | en_US |
顯示於類別: | 期刊論文 |