完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | LIN, HC | en_US |
dc.contributor.author | UEN, TM | en_US |
dc.contributor.author | LIU, CK | en_US |
dc.contributor.author | JUANG, JY | en_US |
dc.contributor.author | WU, KH | en_US |
dc.contributor.author | GOU, YS | en_US |
dc.date.accessioned | 2019-04-02T05:59:28Z | - |
dc.date.available | 2019-04-02T05:59:28Z | - |
dc.date.issued | 1995-10-02 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.115086 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/149141 | - |
dc.description.abstract | Distinct crystalline superconducting grains of Tl2Ba2Ca2Cu3O10+x(Tl-2223) with sizes up to 150 mu mx150 mu mX1 mu m were prepared by a single target dc-sputtering process followed by proper postannealing at temperatures around 910 degrees C. A reactive ion etching process was developed to pattern an similar to 10 mu m wide bridge with four contact leads directly on a single grain to study its superconducting transport properties. The etching process was found to have only minimal effect on the superconducting transition temperature T-c, which was typically around 110 K. Grains grown on MgO(100) and LaAlO3(100) substrates, although, displaying somewhat different in-plane orientations, all had critical current densities J(c), well above 10(6) A/cm2 at 77 K. The existence of only one grain boundary, however, can reduce the J(c) by orders of magnitude. (C) 1995 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | GROWTH AND PROPERTIES OF SUBMILLIMETER SINGLE GRAIN TL2BA2CA2CU3O10+X SUPERCONDUCTING THIN-FILMS | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.115086 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 67 | en_US |
dc.citation.spage | 2084 | en_US |
dc.citation.epage | 2086 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 光電工程研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of EO Enginerring | en_US |
dc.identifier.wosnumber | WOS:A1995RX49500044 | en_US |
dc.citation.woscount | 8 | en_US |
顯示於類別: | 期刊論文 |