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dc.contributor.authorLIN, HCen_US
dc.contributor.authorUEN, TMen_US
dc.contributor.authorLIU, CKen_US
dc.contributor.authorJUANG, JYen_US
dc.contributor.authorWU, KHen_US
dc.contributor.authorGOU, YSen_US
dc.date.accessioned2019-04-02T05:59:28Z-
dc.date.available2019-04-02T05:59:28Z-
dc.date.issued1995-10-02en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.115086en_US
dc.identifier.urihttp://hdl.handle.net/11536/149141-
dc.description.abstractDistinct crystalline superconducting grains of Tl2Ba2Ca2Cu3O10+x(Tl-2223) with sizes up to 150 mu mx150 mu mX1 mu m were prepared by a single target dc-sputtering process followed by proper postannealing at temperatures around 910 degrees C. A reactive ion etching process was developed to pattern an similar to 10 mu m wide bridge with four contact leads directly on a single grain to study its superconducting transport properties. The etching process was found to have only minimal effect on the superconducting transition temperature T-c, which was typically around 110 K. Grains grown on MgO(100) and LaAlO3(100) substrates, although, displaying somewhat different in-plane orientations, all had critical current densities J(c), well above 10(6) A/cm2 at 77 K. The existence of only one grain boundary, however, can reduce the J(c) by orders of magnitude. (C) 1995 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleGROWTH AND PROPERTIES OF SUBMILLIMETER SINGLE GRAIN TL2BA2CA2CU3O10+X SUPERCONDUCTING THIN-FILMSen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.115086en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume67en_US
dc.citation.spage2084en_US
dc.citation.epage2086en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:A1995RX49500044en_US
dc.citation.woscount8en_US
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