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dc.contributor.authorCHENG, JYen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.authorCHAO, TSen_US
dc.date.accessioned2019-04-02T05:59:28Z-
dc.date.available2019-04-02T05:59:28Z-
dc.date.issued1995-10-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.2050039en_US
dc.identifier.urihttp://hdl.handle.net/11536/149144-
dc.description.abstractThe planarization of trench isolation refilled by deposition oi polysilicon was investigated. Results show that the planarization by RIE etching has poor surface planarity. On the other hand, an excellent surface planarity can be achieved by the CMP process resulting from the high etching selectivity of polysilicon to nitride. This simple process provides a very promising candidate for trench isolation.en_US
dc.language.isoen_USen_US
dc.titleA NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISHen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2050039en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume142en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995RZ32800008en_US
dc.citation.woscount2en_US
Appears in Collections:Articles