完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, WCen_US
dc.contributor.authorLee, CLen_US
dc.date.accessioned2019-04-02T05:59:11Z-
dc.date.available2019-04-02T05:59:11Z-
dc.date.issued1996-06-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.362592en_US
dc.identifier.urihttp://hdl.handle.net/11536/149220-
dc.description.abstractThis work studied the AuGe to n-InP/ohmic contact system with the addition of Pt. It studied two contact schemes, i.e., Au/Ge/Pt/n-InP and Au/Pt/Au/Ge/n-InP. The specific contact resistances, the thermal stability, as well as the microstructure of the system, were systematically studied with the aid of scanning electron microscopy, Auger electron spectroscopy, Rutherford backscattering analysis, and x-ray diffraction. The processing condition to achieve the optimum contact resistance was also sought and it was found that a specific contact resistance of 2.15x10(-6) Ohm cm(2) could be obtained if the Au/Ge/Pt/n-InP contact system was rapid thermal annealed at 550 degrees C for 30 s. The system was also found to be able to achieve low specific contact resistances for a wide range of anneal temperature from 400 to 550 degrees C. It was found that the Pt existence in-between AuGe and InP improved the surface morphology, the contact interface uniformity, and the thermal stability. The system could withstand a thermal aging at 400 degrees C for 80 h with only a minimal increase on the specific contact resistance. (C) 1996 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleAuGePt ohmic contact to n-type InPen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.362592en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume79en_US
dc.citation.spage9200en_US
dc.citation.epage9205en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996UT34100048en_US
dc.citation.woscount4en_US
顯示於類別:期刊論文