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dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorChen, P. C.en_US
dc.contributor.authorWu, Y. H.en_US
dc.contributor.authorYeh, F. S.en_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:21:00Z-
dc.date.available2014-12-08T15:21:00Z-
dc.date.issued2011-12-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2168939en_US
dc.identifier.urihttp://hdl.handle.net/11536/14923-
dc.description.abstractUsing nanocrystal (nc) TiO(2) and TaON buffer layer, the Ni/GeO(x)/nc-TiO(2)/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10(10) cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.en_US
dc.language.isoen_USen_US
dc.titleLong-Endurance Nanocrystal TiO(2) Resistive Memory Using a TaON Buffer Layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2011.2168939en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume32en_US
dc.citation.issue12en_US
dc.citation.spage1749en_US
dc.citation.epage1751en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
Appears in Collections:Articles