標題: Long-Endurance Nanocrystal TiO(2) Resistive Memory Using a TaON Buffer Layer
作者: Cheng, C. H.
Chen, P. C.
Wu, Y. H.
Yeh, F. S.
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Dec-2011
摘要: Using nanocrystal (nc) TiO(2) and TaON buffer layer, the Ni/GeO(x)/nc-TiO(2)/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10(10) cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.
URI: http://dx.doi.org/10.1109/LED.2011.2168939
http://hdl.handle.net/11536/14923
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2168939
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 12
起始頁: 1749
結束頁: 1751
Appears in Collections:Articles