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dc.contributor.authorWang, CCen_US
dc.contributor.authorKu, TKen_US
dc.contributor.authorHsieh, IJen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2019-04-02T05:58:30Z-
dc.date.available2019-04-02T05:58:30Z-
dc.date.issued1996-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.35.3681en_US
dc.identifier.urihttp://hdl.handle.net/11536/149248-
dc.description.abstractThe structure of Pd-silicided held emitters based on the silicon micromachining technology has been demonstrated. The uniform and extremely sharp silicided emitters are formed using wet chemical etching, low-temperature oxidation sharpening (LTOS), metal coating, and furnace annealing. The silicided emitters are firstly identified by the bright-held, dark-held images, and diffraction patterns of transmission electron microscope (TEM). Under the applied voltage of 1100 V, the anode currents of the Pd-coated and silicided emitters are 16 mu A and 26 mu A, respectively. The values of threshold voltage V-T for Pd-coated and silicided emitters are about 745 V and 785 V, respectively. The lower threshold voltage of the Pd-coated emitters is duo to the smaller emission work function of palladium. The emission work function of the Pd-silicided emitters is calculated to be 8.31 eV. Furthermore; the long and short-term current stabilities of silicided emitters is also better than that of Pd-coated ones. These results show that these silicided emitters have potential applications in vacuum microelectronics to obtain superior Lifetime, reliability, and stability.en_US
dc.language.isoen_USen_US
dc.subjectPden_US
dc.subjectsilicideden_US
dc.subjectfield emitteren_US
dc.subjectmicromachiningen_US
dc.subjectsharpeningen_US
dc.subjectannealingen_US
dc.subjectTEMen_US
dc.titleFabrication and characterization of the Pd-silicided emitters for field-emission devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.35.3681en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume35en_US
dc.citation.spage3681en_US
dc.citation.epage3685en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996UX14000071en_US
dc.citation.woscount8en_US
Appears in Collections:Articles