次微米閘極開孔及下凹式閘極場發射元件新的製程技術

Abstract

本論文提出一個新的製程技術用以製造出次微米閘極開孔及下凹式閘極場 發射元件.此方法是利用低溫氧化削尖技術,低壓化學氣相沉積法的特性及 返回蝕刻的技術為基礎,製造出次微米閘極開孔及下凹式閘極場發射元件. 在整個製造過程中,只要一道光學製版術用的罩幕,並不需要高解析度製版 術的設備.這尖的矽發射極尖端的曲率半徑用掃描式及穿透式電子顯微鏡 觀察得知少於200埃.0.8微米,0.5微米,以及0.3微米閘極開孔場發射元件 被成功地示範出來,更大或更小的閘極開孔元件也付用此技術製造出.此矽 發射極被鍍上一層鈀金屬及在氮氣爐管中退火.片電阻的結果顯示出鈀矽 化物已形成,穿透式電子顯微鏡的研究更證明鈀矽化物發射極的完成. In this thesis, a new fabrication method is used to manufacture the submicrometer-gate-opening and recessed-gate field emission devices.The method is based on the thermal oxidation of silicon , low pressure chemical vapor deposition (LPCVD) and etchback technique to make the submicrometer gate-opening and recessed- gate field emission triodes. Only one photolithography mask without high resolution photolithographic equivalent is used for the entire process. The radii of the sharpened silicon emitters observed with SEM and TEM are less than 200 A. Field emission triode with a gate-emitter separation of 0.15 um is presented. Then, the silicon emitters are coated by Pd metal and furnace annealing in N2 ambient. The sheet resistance results depict the silicidation transformation. Tansmission Electron Microscope and EDX studies show that the silicided emitters are accomplished.