標題: A NEW FABRICATION TECHNOLOGY FOR FIELD-EMISSION TRIODES WITH EMITTER-GATE SEPARATION OF 0.18-MU-M
作者: WANG, CC
LEE, WF
KU, TK
CHEN, MS
FENG, MS
HSIEH, IJ
CHENG, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: FIELD EMISSION;EMITTER-GATE SEPARATION;LPCVD;GATE OPENING;SHARPENING
公開日期: 1-一月-1995
摘要: A new fabrication technology has been used for field-emission triodes with the emitter-gate separation as small as 0.18 mum to reduce the turn-on and anode voltages. The technology is based on the thermal oxidation of silicon and low-pressure chemical vapor deposition (LPCVD) of polycrystalline silicon, making the fabrication of a sub-half-micronmeter gate opening easy and reproducible. The entire process requires use of only one photolithography mask, and does not require advanced high-resolution photolithographic techniques. In this device, the oxidation process serves the three purposes of sharpening the emitters, defining the emitter-gate separation, and achieving a high-quality insulator. The finished devices have the emitter situated exactly at the center of the gate opening due to a self-alignment process. Furthermore, the LPCVD polysilicon film can form gate electrodes with a smooth edge and a small gate opening due to excellent step coverage.
URI: http://dx.doi.org/10.1143/JJAP.34.L85
http://hdl.handle.net/11536/2155
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.L85
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 34
Issue: 1A
起始頁: L85
結束頁: L87
顯示於類別:期刊論文