標題: | Low-noise metamorphic HEMTs with reflowed 0.1 mu m T-gate |
作者: | Lien, YC Chang, EY Chang, HC Chu, LH Huang, GW Lee, HM Lee, CS Chen, SH Shen, PT Chang, CY 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
關鍵字: | cutoff frequency;e-beam;gate length;maximum frequency;metamorphic high electron-mobility transistors;(MHEMTs);noise figure (NF);T-gate;thermally reflow |
公開日期: | 1-六月-2004 |
摘要: | A 0.1-mum T-gate fabricated using e-beam lithography and thermally reflow process was developed and applied to the manufacture of the low-noise metamorphic high electron-mobility transistors (MHEMTs). The T-gate developed using the thermally reflowed e-beam resist technique had a gate length of 0.1 mum and compatible with the MHEMT fabrication process. The MHEMT manufactured demonstrates a cutoff frequency f(T) of 154 GHz and a maximum frequency f(max). of 300 GHz. The noise figure for the 160 mum gate-width device is less than 1 dB and the associated gain is up to 14 dB at 18 GHz. This is the first report of a 0.1 mum MHEMT device manufactured using the reflowed e-beam resist process for T-gate formation. |
URI: | http://dx.doi.org/10.1109/LED.2004.829027 http://hdl.handle.net/11536/26721 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2004.829027 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 25 |
Issue: | 6 |
起始頁: | 348 |
結束頁: | 350 |
顯示於類別: | 期刊論文 |