標題: | A metamorphic high electron-mobitity transistor with reflowed submicron T-Gate for high-speed optoelectronics applications |
作者: | Lien, YC Chang, EY Chu, LX Chang, HC Lee, CS Chen, SH Lin, YC Lee, HM 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2003 |
摘要: | A metamorphic high electron-mobility transistor (HEMT) manufactured with reflowed submicron T-gate using E-beam lithography for high-speed optoelectronics applications is developed. The In0.53Al0.47As/InGaAs HEMT uses InxAl1-xAs as the buffer layer between GaAs substrate and the InP lattice-matched HEMT structure. The T-gate developed has a gate length of 0.1 mum. The fabricated metamorphic HEMT has a saturation drain current of 280mA/mrn and a transconductance of 840mS/mm at V-DS=1.2V Noise figure for 160 mum gate-width device is less than 1 dB and the associated gain is up to 14dB at 18GHz. The device demonstrates a cut-off frequency f(T) of 150GHz and a maximum frequency f(MAX) up to 350GHz. The metamorphic HEMT developed has the potential for high-speed optoelectronics applications. |
URI: | http://hdl.handle.net/11536/18653 |
ISBN: | 0-7803-7887-3 |
期刊: | PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM |
起始頁: | 281 |
結束頁: | 283 |
顯示於類別: | 會議論文 |