A metamorphic high electron-mobitity transistor with reflowed submicron T-Gate for high-speed optoelectronics applications

Abstract

A metamorphic high electron-mobility transistor (HEMT) manufactured with reflowed submicron T-gate using E-beam lithography for high-speed optoelectronics applications is developed. The In0.53Al0.47As/InGaAs HEMT uses InxAl1-xAs as the buffer layer between GaAs substrate and the InP lattice-matched HEMT structure. The T-gate developed has a gate length of 0.1 mum. The fabricated metamorphic HEMT has a saturation drain current of 280mA/mrn and a transconductance of 840mS/mm at V-DS=1.2V Noise figure for 160 mum gate-width device is less than 1 dB and the associated gain is up to 14dB at 18GHz. The device demonstrates a cut-off frequency f(T) of 150GHz and a maximum frequency f(MAX) up to 350GHz. The metamorphic HEMT developed has the potential for high-speed optoelectronics applications.