標題: A metamorphic high electron-mobitity transistor with reflowed submicron T-Gate for high-speed optoelectronics applications
作者: Lien, YC
Chang, EY
Chu, LX
Chang, HC
Lee, CS
Chen, SH
Lin, YC
Lee, HM
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2003
摘要: A metamorphic high electron-mobility transistor (HEMT) manufactured with reflowed submicron T-gate using E-beam lithography for high-speed optoelectronics applications is developed. The In0.53Al0.47As/InGaAs HEMT uses InxAl1-xAs as the buffer layer between GaAs substrate and the InP lattice-matched HEMT structure. The T-gate developed has a gate length of 0.1 mum. The fabricated metamorphic HEMT has a saturation drain current of 280mA/mrn and a transconductance of 840mS/mm at V-DS=1.2V Noise figure for 160 mum gate-width device is less than 1 dB and the associated gain is up to 14dB at 18GHz. The device demonstrates a cut-off frequency f(T) of 150GHz and a maximum frequency f(MAX) up to 350GHz. The metamorphic HEMT developed has the potential for high-speed optoelectronics applications.
URI: http://hdl.handle.net/11536/18653
ISBN: 0-7803-7887-3
期刊: PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM
起始頁: 281
結束頁: 283
Appears in Collections:Conferences Paper