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dc.contributor.authorYeh, CFen_US
dc.contributor.authorLin, SSen_US
dc.contributor.authorLur, WTen_US
dc.date.accessioned2019-04-02T05:58:32Z-
dc.date.available2019-04-02T05:58:32Z-
dc.date.issued1996-08-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1837065en_US
dc.identifier.urihttp://hdl.handle.net/11536/149277-
dc.description.abstractTo To develop a low-stress dielectric thin film, a novel liquid-phase deposition (LPD) technique utilizing silica-saturated hydrofluosilicic (H2SiF6) solution with only H2O added is proposed. Due to fluorine incorporation, the stress in as deposited LPD oxide can be as low as 83.3 MPa (tensile). Addition of H2O greatly affects the stresses in as-deposited LPD oxide: the less H2O added, the lower the stress will be. The stress variations accompanying thermal cycling have also been larger quantity of H2O added exhibited larger stress variations (hysteresis). After ex situ annealing at around 600 degrees C, the total stress decreased to near 0 MPa.en_US
dc.language.isoen_USen_US
dc.titleStress in liquid-phase deposited oxide filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1837065en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume143en_US
dc.citation.spage2658en_US
dc.citation.epage2662en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996VC70600051en_US
dc.citation.woscount6en_US
Appears in Collections:Articles