標題: Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor
作者: Chao, TS
Liaw, MC
Chu, CH
Chang, CY
Chien, CH
Hao, CP
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 16-Sep-1996
摘要: The mechanism of the nitrogen co-implant to suppress the boron penetration in p(+)-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF, combines with the boron to form a B-N complex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show improved electrical properties. (C) 1996 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.117484
http://hdl.handle.net/11536/149302
ISSN: 0003-6951
DOI: 10.1063/1.117484
期刊: APPLIED PHYSICS LETTERS
Volume: 69
起始頁: 1781
結束頁: 1782
Appears in Collections:Articles