標題: Effect of bis-(3-sodiumsulfopropyl disulfide) byproducts on copper defects after chemical mechanical polishing
作者: Hung, Chi-Cheng
Lee, Wen-Hsi
Hu, Shao-Yu
Chang, Shih-Chieh
Chen, Kei-Wei
Wang, Ying-Lang
交大名義發表
National Chiao Tung University
公開日期: 1-Jan-2008
摘要: In the semiconductor metallization process, the superior gap-fill capability of copper (Cu) electroplating is mainly due to external additives, such as bis-(3-sodiumsulfopropyl disulfide) (SPS), which is used as an accelerator. This study demonstrates that the byproducts of SPS induced Cu defects after a chemical-mechanical-polishing (CMP) process. In conventional cyclic-voltammetric-stripping analysis, the byproducts generated from organic additives are very difficult to quantify. In this study, the authors used mass-spectrum analysis to quantify SPS byproducts and found that the SPS byproduct, 1,3-propanedisulfonic acid, correlated with the formation of Cu defects because it influenced the properties of electroplated Cu films and the chemical corrosion rate, then induced defects after the CMP process. (C) 2008 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.2834679
http://hdl.handle.net/11536/149379
ISSN: 1071-1023
DOI: 10.1116/1.2834679
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 26
Issue: 1
起始頁: 255
結束頁: 259
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