標題: | Effect of bis-(3-sodiumsulfopropyl disulfide) byproducts on copper defects after chemical mechanical polishing |
作者: | Hung, Chi-Cheng Lee, Wen-Hsi Hu, Shao-Yu Chang, Shih-Chieh Chen, Kei-Wei Wang, Ying-Lang 交大名義發表 National Chiao Tung University |
公開日期: | 1-Jan-2008 |
摘要: | In the semiconductor metallization process, the superior gap-fill capability of copper (Cu) electroplating is mainly due to external additives, such as bis-(3-sodiumsulfopropyl disulfide) (SPS), which is used as an accelerator. This study demonstrates that the byproducts of SPS induced Cu defects after a chemical-mechanical-polishing (CMP) process. In conventional cyclic-voltammetric-stripping analysis, the byproducts generated from organic additives are very difficult to quantify. In this study, the authors used mass-spectrum analysis to quantify SPS byproducts and found that the SPS byproduct, 1,3-propanedisulfonic acid, correlated with the formation of Cu defects because it influenced the properties of electroplated Cu films and the chemical corrosion rate, then induced defects after the CMP process. (C) 2008 American Vacuum Society. |
URI: | http://dx.doi.org/10.1116/1.2834679 http://hdl.handle.net/11536/149379 |
ISSN: | 1071-1023 |
DOI: | 10.1116/1.2834679 |
期刊: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B |
Volume: | 26 |
Issue: | 1 |
起始頁: | 255 |
結束頁: | 259 |
Appears in Collections: | Articles |
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