標題: Dependence of channel thickness on the performance of In2O3 thin film transistors
作者: Dhananjay
Cheng, Shiau-Shin
Yang, Chuan-Yi
Ou, Chun-Wei
Chuang, You-Che
Wu, M. Chyi
Chu, Chih-Wei
光電工程學系
Department of Photonics
公開日期: 7-五月-2008
摘要: Bottom gate and top contact thin film transistors were fabricated using In2O3 thin films as active channel layers. Thin films of varying thicknesses in the range 5 - 20 nm were deposited on an SiO2 gate dielectric by the thermal evaporation process in the presence of high purity oxygen. The results of atomic force microscopy show that all the films exhibit dense grain distribution with a root-mean-square roughness in the range 0.6-8.0 nm. Irrespective of the thickness of the channel layer, the on/off ratio of the device is 10(4). The channel mobility and resistivity were found to be a strong function of the thickness of the active layer. The Levinson model was used to calculate the trap density and the grain boundary mobility. The low processing temperature shows the possibility of utilizing these devices on flexible substrates such as polymer substrates.
URI: http://dx.doi.org/10.1088/0022-3727/41/9/092006
http://hdl.handle.net/11536/149390
ISSN: 0022-3727
DOI: 10.1088/0022-3727/41/9/092006
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 41
顯示於類別:期刊論文