Metamorphic In0.53Ga0.47As Metal-Oxide-Semiconductor Structure on a GaAs Substrate with ZrO2 High-k Dielectrics

Abstract

The electrical properties of metamorphic In0.53Ga0.47As metal-oxide-semiconductor capacitors with a 100-angstrom-thick ZrO2 layer as high-k dielectrics were investigated. The In0.53Ga0.47As surface was pretreated by either sulfur passivation or HCl cleaning before the ZrO2 deposition. Owing to the lower interface-state density after sulfidation, the sulfur-passivated capacitor exhibited better accumulation capacitance and strong inversion at capacitance-voltage measurement than the HCl-cleaned capacitor after post deposition annealing at 350 degrees C. On the basis of material analyses, the capacitors that subjected to underwent sulfur treatment were found to acquire a thin sulfur layer on the interface, which protects their surface from air exposure and prevents performance degradation. [DOI: 10.1143/JJAP.47.3441]