標題: | Metamorphic In0.53Ga0.47As Metal-Oxide-Semiconductor Structure on a GaAs Substrate with ZrO2 High-k Dielectrics |
作者: | Ku, Chien-I Chang, Edward Yi Hsu, Heng-Tung Chen, Chun-Chi Chang, Chia-Yuan 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | metamorphic In0.53Ga0.47As;zirconium dioxide;metal-oxide-semiconductor capacitors |
公開日期: | 1-May-2008 |
摘要: | The electrical properties of metamorphic In0.53Ga0.47As metal-oxide-semiconductor capacitors with a 100-angstrom-thick ZrO2 layer as high-k dielectrics were investigated. The In0.53Ga0.47As surface was pretreated by either sulfur passivation or HCl cleaning before the ZrO2 deposition. Owing to the lower interface-state density after sulfidation, the sulfur-passivated capacitor exhibited better accumulation capacitance and strong inversion at capacitance-voltage measurement than the HCl-cleaned capacitor after post deposition annealing at 350 degrees C. On the basis of material analyses, the capacitors that subjected to underwent sulfur treatment were found to acquire a thin sulfur layer on the interface, which protects their surface from air exposure and prevents performance degradation. [DOI: 10.1143/JJAP.47.3441] |
URI: | http://dx.doi.org/10.1143/JJAP.47.3441 http://hdl.handle.net/11536/149424 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.47.3441 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 47 |
起始頁: | 3441 |
結束頁: | 3443 |
Appears in Collections: | Articles |