完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ku, Chien-I | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.contributor.author | Hsu, Heng-Tung | en_US |
dc.contributor.author | Chen, Chun-Chi | en_US |
dc.contributor.author | Chang, Chia-Yuan | en_US |
dc.date.accessioned | 2019-04-02T06:01:05Z | - |
dc.date.available | 2019-04-02T06:01:05Z | - |
dc.date.issued | 2008-05-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.47.3441 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/149424 | - |
dc.description.abstract | The electrical properties of metamorphic In0.53Ga0.47As metal-oxide-semiconductor capacitors with a 100-angstrom-thick ZrO2 layer as high-k dielectrics were investigated. The In0.53Ga0.47As surface was pretreated by either sulfur passivation or HCl cleaning before the ZrO2 deposition. Owing to the lower interface-state density after sulfidation, the sulfur-passivated capacitor exhibited better accumulation capacitance and strong inversion at capacitance-voltage measurement than the HCl-cleaned capacitor after post deposition annealing at 350 degrees C. On the basis of material analyses, the capacitors that subjected to underwent sulfur treatment were found to acquire a thin sulfur layer on the interface, which protects their surface from air exposure and prevents performance degradation. [DOI: 10.1143/JJAP.47.3441] | en_US |
dc.language.iso | en_US | en_US |
dc.subject | metamorphic In0.53Ga0.47As | en_US |
dc.subject | zirconium dioxide | en_US |
dc.subject | metal-oxide-semiconductor capacitors | en_US |
dc.title | Metamorphic In0.53Ga0.47As Metal-Oxide-Semiconductor Structure on a GaAs Substrate with ZrO2 High-k Dielectrics | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.47.3441 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 47 | en_US |
dc.citation.spage | 3441 | en_US |
dc.citation.epage | 3443 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000256462500026 | en_US |
dc.citation.woscount | 2 | en_US |
顯示於類別: | 期刊論文 |