標題: | Theoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum states |
作者: | Yen, ST Lee, CP 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | quantum well lasers;quantum wells;semiconductor device modeling;semiconductor lasers;spontaneous emission;visible lasers |
公開日期: | 1-三月-1997 |
摘要: | GaInP-AlGaInP strained quantum-well lasers with emission wavelength at 630-nm band are theoretically analyzed in detail and then optimized, The valence band structure of quantum wells is obtained by evaluating the 6x6 Luttinger-Kohn Hamiltonian including the coupling among the heavy hole, the light hole, and the spin-orbital split-off hole bands, The effect of optical transition from/to continuum states not confined to the quantum well is studied, It is found that the optical transition from/to the continuum states is serious as the band gap of the confining layers is close to the quasi-Fermi level separation, leading to considerable radiative current, This radiative current is undesirable since the corresponding optical transition does not contribute significantly to the threshold gain, The gain-radiative current characteristic is therefore poor for confining layers containing a low Al content. To avoid unreasonable gain/absorption, the non-Markovian convolution lineshape is used instead of the conventional Lorentzian lineshape. The leakage current is high for single quantum-well lasers with wide bandgap confining layers, It can be reduced by increasing the quantum-well number, the dopant concentration, and the band gap of cladding layers, The calculated threshold current agrees wed with the observation, The band gap shrinkage due to the carrier-carrier interaction is considered to obtain an emission wavelength consistent with the experimental result. |
URI: | http://hdl.handle.net/11536/149444 |
ISSN: | 0018-9197 |
期刊: | IEEE JOURNAL OF QUANTUM ELECTRONICS |
Volume: | 33 |
起始頁: | 443 |
結束頁: | 456 |
顯示於類別: | 期刊論文 |