標題: | Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers |
作者: | Kuo, Y. -K. Chen, J. -R. Chen, M. -L. Liou, B. -T. 光電工程學系 Department of Photonics |
公開日期: | 1-三月-2007 |
摘要: | The physical and optical properties of compressively strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers are numerically studied. The simulation results show that the maximum optical gain, transparency carrier densities, transparency radiative current densities, and differential gain of InGaAsP quantum wells can be efficiently improved by employing a compressive strain of approximately 1.24% in the InGaAsP quantum wells. The simulation results suggest that the 850-nm InGaAsP/InGaP vertical-cavity surface-emitting lasers have the best laser performance when the number of quantum wells is one, which is mainly attributed to the non-uniform hole distribution in multiple quantum wells due to high valence band offset. |
URI: | http://dx.doi.org/10.1007/s00340-006-2567-5 http://hdl.handle.net/11536/11035 |
ISSN: | 0946-2171 |
DOI: | 10.1007/s00340-006-2567-5 |
期刊: | APPLIED PHYSICS B-LASERS AND OPTICS |
Volume: | 86 |
Issue: | 4 |
起始頁: | 623 |
結束頁: | 631 |
顯示於類別: | 期刊論文 |