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dc.contributor.authorChu, CSen_US
dc.contributor.authorChu, KDen_US
dc.date.accessioned2019-04-02T06:00:22Z-
dc.date.available2019-04-02T06:00:22Z-
dc.date.issued1997-04-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/149481-
dc.description.abstractThe exciton binding energy and the low-lying exciton states in a type-II broken-gap quantum well structure are studied. The conduction electron and the hole that form the exciton are spatially separated and are each confined by a quantum well. A variation-basis-set approach is proposed in which a set of variation basis set wavefunctions are constructed from the eigenstates of a variation Hamiltonian. The calculation of the exciton states can be carried out systematically and the accuracy of the state energies can be estimated. Numerical examples are presented, showing the rapid convergence of the excitonic levels with respect to the size of the variation basis set in and beyond the small well width regime. The effective binding energies for the states are found to increase with the decreasing of the well width. The low-lying exciton states in and beyond the small well width regime are presented.en_US
dc.language.isoen_USen_US
dc.titleLow-lying exciton states in a type-II broken-gap quantum well structure: A variation-basis-set approachen_US
dc.typeArticleen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume35en_US
dc.citation.spage164en_US
dc.citation.epage173en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1997WR51700007en_US
dc.citation.woscount0en_US
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