Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kao, Kuo-Hsing | en_US |
dc.contributor.author | Chuang, Shiow-Huey | en_US |
dc.contributor.author | Wu, Woei-Cherng | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.contributor.author | Chen, Jian-Hao | en_US |
dc.contributor.author | Ma, Ming-Wen | en_US |
dc.contributor.author | Gao, Reui-Hong | en_US |
dc.contributor.author | Chiang, Michael Y. | en_US |
dc.date.accessioned | 2019-04-02T06:01:07Z | - |
dc.date.available | 2019-04-02T06:01:07Z | - |
dc.date.issued | 2008-09-01 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2978231 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/149501 | - |
dc.description.abstract | The characteristics of CoTiO3 high-k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k similar to 40.2) of CoTiO3 dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence band offset between thermal SiO2 and spin-on CoTiO3 was about 4.0 eV, which was detected by x-ray photoelectron spectroscopy. The band gaps of thermal SiO2 and spin-on CoTiO3 were 9.0 and 2.2 eV, respectively. Energy band alignment of spin-on CoTiO3 directly with SiO2 and indirectly with Si was determined in this work. (c) 2008 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high-k dielectric prepared by sol-gel spin coating method | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2978231 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 93 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000258975800049 | en_US |
dc.citation.woscount | 2 | en_US |
Appears in Collections: | Articles |