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dc.contributor.authorKao, Kuo-Hsingen_US
dc.contributor.authorChuang, Shiow-Hueyen_US
dc.contributor.authorWu, Woei-Cherngen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorChen, Jian-Haoen_US
dc.contributor.authorMa, Ming-Wenen_US
dc.contributor.authorGao, Reui-Hongen_US
dc.contributor.authorChiang, Michael Y.en_US
dc.date.accessioned2019-04-02T06:01:07Z-
dc.date.available2019-04-02T06:01:07Z-
dc.date.issued2008-09-01en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2978231en_US
dc.identifier.urihttp://hdl.handle.net/11536/149501-
dc.description.abstractThe characteristics of CoTiO3 high-k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k similar to 40.2) of CoTiO3 dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence band offset between thermal SiO2 and spin-on CoTiO3 was about 4.0 eV, which was detected by x-ray photoelectron spectroscopy. The band gaps of thermal SiO2 and spin-on CoTiO3 were 9.0 and 2.2 eV, respectively. Energy band alignment of spin-on CoTiO3 directly with SiO2 and indirectly with Si was determined in this work. (c) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleX-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high-k dielectric prepared by sol-gel spin coating methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2978231en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume93en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000258975800049en_US
dc.citation.woscount2en_US
Appears in Collections:Articles