Reduction of leakage current in chemical-vapor-deposited Ta2O5 thin films by furnace N2O annealing

doi:10.1109/16.585562

標題:	Reduction of leakage current in chemical-vapor-deposited Ta2O5 thin films by furnace N2O annealing
作者:	Sun, SC Chen, TF 電子工程學系及電子研究所奈米中心 Department of Electronics Engineering and Institute of Electronics Nano Facility Center
公開日期:	1-Jun-1997
摘要:	In this brief, we present a post-deposition annealing technique that employs furnace annealing in N2O (FN2O) to reduce the leakage current of chemical-vapor-deposited tantalum penta-oxide (CVD Ta2O5) thin films, Compared with furnace annealing in O-2 (FO) and rapid thermal annealing in N2O (RTN2O), FN2O annealing proved to have the lowest leakage current and the most reliable time-dependent dielectric breakdown (TDDB).
URI:	http://dx.doi.org/10.1109/16.585562 http://hdl.handle.net/11536/149519
ISSN:	0018-9383
DOI:	10.1109/16.585562
期刊:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	44
起始頁:	1027
結束頁:	1029
Appears in Collections:	Articles