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dc.contributor.authorChou, WCen_US
dc.contributor.authorLin, CMen_US
dc.contributor.authorRo, RSen_US
dc.contributor.authorHo, CSen_US
dc.contributor.authorHong, DYen_US
dc.contributor.authorYang, CSen_US
dc.contributor.authorChuu, DSen_US
dc.contributor.authorYang, TJen_US
dc.contributor.authorXu, Jen_US
dc.contributor.authorHuang, Een_US
dc.date.accessioned2019-04-02T05:59:51Z-
dc.date.available2019-04-02T05:59:51Z-
dc.date.issued1997-06-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/149536-
dc.description.abstractThe ZnSe was studied by Raman scattering spectroscopy at pressures up to 36 GPa at first time. The present researchers have found splittings of transverse optical (TO) phonon at 4.65 and 7.61 GPa. In addition, the Raman signals of the longitudinal optical (LO) phonon disappeared at 14.35 GPa. The disappearance of the LO phonon is attributed to the semiconductor-metal phase transition. However, the TO phonon peaks were still visible above the metallization pressure.en_US
dc.language.isoen_USen_US
dc.titleA Raman study of ZnSe at high pressureen_US
dc.typeArticleen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume35en_US
dc.citation.spage266en_US
dc.citation.epage273en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1997XC14600006en_US
dc.citation.woscount5en_US
Appears in Collections:Articles


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