Title: | A Raman study of ZnSe at high pressure |
Authors: | Chou, WC Lin, CM Ro, RS Ho, CS Hong, DY Yang, CS Chuu, DS Yang, TJ Xu, J Huang, E 電子物理學系 Department of Electrophysics |
Issue Date: | 1-Jun-1997 |
Abstract: | The ZnSe was studied by Raman scattering spectroscopy at pressures up to 36 GPa at first time. The present researchers have found splittings of transverse optical (TO) phonon at 4.65 and 7.61 GPa. In addition, the Raman signals of the longitudinal optical (LO) phonon disappeared at 14.35 GPa. The disappearance of the LO phonon is attributed to the semiconductor-metal phase transition. However, the TO phonon peaks were still visible above the metallization pressure. |
URI: | http://hdl.handle.net/11536/512 |
ISSN: | 0577-9073 |
Journal: | CHINESE JOURNAL OF PHYSICS |
Volume: | 35 |
Issue: | 3 |
Begin Page: | 266 |
End Page: | 273 |
Appears in Collections: | Articles |