標題: A Raman study of ZnSe at high pressure
作者: Chou, WC
Lin, CM
Ro, RS
Ho, CS
Hong, DY
Yang, CS
Chuu, DS
Yang, TJ
Xu, J
Huang, E
電子物理學系
Department of Electrophysics
公開日期: 1-六月-1997
摘要: The ZnSe was studied by Raman scattering spectroscopy at pressures up to 36 GPa at first time. The present researchers have found splittings of transverse optical (TO) phonon at 4.65 and 7.61 GPa. In addition, the Raman signals of the longitudinal optical (LO) phonon disappeared at 14.35 GPa. The disappearance of the LO phonon is attributed to the semiconductor-metal phase transition. However, the TO phonon peaks were still visible above the metallization pressure.
URI: http://hdl.handle.net/11536/512
ISSN: 0577-9073
期刊: CHINESE JOURNAL OF PHYSICS
Volume: 35
Issue: 3
起始頁: 266
結束頁: 273
顯示於類別:期刊論文