标题: A Raman study of ZnSe at high pressure
作者: Chou, WC
Lin, CM
Ro, RS
Ho, CS
Hong, DY
Yang, CS
Chuu, DS
Yang, TJ
Xu, J
Huang, E
電子物理學系
Department of Electrophysics
公开日期: 1-六月-1997
摘要: The ZnSe was studied by Raman scattering spectroscopy at pressures up to 36 GPa at first time. The present researchers have found splittings of transverse optical (TO) phonon at 4.65 and 7.61 GPa. In addition, the Raman signals of the longitudinal optical (LO) phonon disappeared at 14.35 GPa. The disappearance of the LO phonon is attributed to the semiconductor-metal phase transition. However, the TO phonon peaks were still visible above the metallization pressure.
URI: http://hdl.handle.net/11536/149536
ISSN: 0577-9073
期刊: CHINESE JOURNAL OF PHYSICS
Volume: 35
起始页: 266
结束页: 273
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