High-Performance (AlxGa1-x)(0.5)In0.5P-Based Flip-Chip Light-Emitting Diode With a Geometric Sapphire Shaping Structure

doi:10.1109/LPT.2008.2005507

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, Yea-Chen	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lee, Chia-En	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2019-04-02T06:00:56Z	-
dc.date.available	2019-04-02T06:00:56Z	-
dc.date.issued	2008-11-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2008.2005507	en_US
dc.identifier.uri	http://hdl.handle.net/11536/149701	-
dc.description.abstract	AlGaInP-based flip-chip light-emitting diodes (LEDs) with geometric sapphire shaping structures were fabricated by sapphire chemical etching and glue-bonded techniques. Furthermore, a nanoscale rough texture was applied on the epiwafer surface. This novel structure improved the output light power, wall-plug efficiency, and reliability. The output power of this structure was enhanced 31.2% under 350-mA current injection as compared with the conventional AlGaInP flip-chip LEDs.	en_US
dc.language.iso	en_US	en_US
dc.subject	AlGaInP-based light-emitting diodes (LEDs)	en_US
dc.subject	geometric sapphire shaping flip-chip light-emitting diodes (GSSFC-LEDs)	en_US
dc.title	High-Performance (AlxGa1-x)(0.5)In0.5P-Based Flip-Chip Light-Emitting Diode With a Geometric Sapphire Shaping Structure	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2008.2005507	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	20	en_US
dc.citation.spage	1950	en_US
dc.citation.epage	1952	en_US
dc.contributor.department	光電工程研究所	zh_TW
dc.contributor.department	Institute of EO Enginerring	en_US
dc.identifier.wosnumber	WOS:000261847800065	en_US
dc.citation.woscount	3	en_US
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